PBLS2002S Datasheet, PDF (10/16 Pages) NXP Semiconductors – 20 V PNP BISS loadswitch

NXP Semiconductors
10³
h_FE
10²
10
006aaa030
(1)
(2)
(3)
1
V_CEsat
(V)
10^−1
PBLS2002S
20 V PNP BISS loadswitch
006aaa031
(1)
(2)
(3)
1
10^−1
1
10
10²
I_C (mA)
V_CE = 5 V
(1) T_amb = 150 °C
(2) T_amb = 25 °C
(3) T_amb = −40 °C
Fig 13. TR2 (NPN): DC current gain as a function of
collector current; typical values
10
006aaa032
10^−2
1
10
10²
I_C (mA)
I_C/I_B = 20
(1) T_amb = 100 °C
(2) T_amb = 25 °C
(3) T_amb = −40 °C
Fig 14. TR2 (NPN): Collector-emitter saturation
voltage as a function of collector current;
typical values
10
006aaa033
V_I(on)
(V)
(1)
1 ⁽²⁾
(3)
V_I(off)
(V)
(1)
1
(2)
(3)
10^−1
10^−1
1
10
10²
I_C (mA)
V_CE = 0.3 V
(1) T_amb = −40 °C
(2) T_amb = 25 °C
(3) T_amb = 100 °C
Fig 15. TR2 (NPN): On-state input voltage as a
function of collector current; typical values
10^−1
10^−2
10^−1
1
10
I_C (mA)
V_CE = 5 V
(1) T_amb = −40 °C
(2) T_amb = 25 °C
(3) T_amb = 100 °C
Fig 16. TR2 (NPN): Off-state input voltage as a
function of collector current; typical values
PBLS2002S_2
Product data sheet
Rev. 02 — 24 August 2009
© NXP B.V. 2009. All rights reserved.
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