PBLS2002S Datasheet, PDF (1/16 Pages) NXP Semiconductors – 20 V PNP BISS loadswitch

PBLS2002S
20 V PNP BISS loadswitch
Rev. 02 — 24 August 2009
Product data sheet
1. Product profile
1.1 General description
PNP low V_CEsat Breakthrough In Small Signal (BISS) transistor and NPN Resistor-
Equipped Transistor (RET) in a SOT96-1 (SO8) small Surface-Mounted Device (SMD)
plastic package.
1.2 Features
I Low V_CEsat (BISS) transistor and resistor-equipped transistor in one package
I Low threshold voltage (< 1 V) compared to MOSFET
I Low drive power required
I Space-saving solution
I Reduction of component count
1.3 Applications
I Supply line switches
I Battery charger switches
I High-side switches for LEDs, drivers and backlights
I Portable equipment
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
TR1; PNP low V_CEsat (BISS) transistor
V_CEO
collector-emitter voltage open base
-
I_C
collector current
-
R_CEsat
collector-emitter saturation I_C = −2 A;
[1] _-
resistance
I_B = −200 mA
TR2; NPN resistor-equipped transistor
-
−20 V
-
−3
A
75
120 mΩ
V_CEO
I_O
R1
collector-emitter voltage
output current
bias resistor 1 (input)
open base
-
-
50
V
-
-
100 mA
3.3
4.7
6.1
kΩ
R2/R1
bias resistor ratio
0.8
1
1.2
[1] Pulse test: t_p ≤ 300 µs; δ ≤ 0.02