PSMN2R5-30YL_11 Datasheet, PDF (1/14 Pages) NXP Semiconductors – N-channel 30 V 2.4 mΩ logic level MOSFET in LFPAK

PSMN2R5-30YL
N-channel 30 V 2.4 mΩ logic level MOSFET in LFPAK
Rev. 04 — 10 March 2011
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
industrial and communications applications.
1.2 Features and benefits
 High efficiency due to low switching
and conduction losses
 Suitable for logic level gate drive
sources
1.3 Applications
 Class-D amplifiers
 DC-to-DC converters
 Motor control
 Server power supplies
1.4 Quick reference data
Table 1.
Symbol
V_DS
I_D
Quick reference data
Parameter
drain-source voltage
drain current
P_tot
total power dissipation
T_j
junction temperature
Static characteristics
R_DSon
drain-source on-state
resistance
Dynamic characteristics
Q_GD
Q_G(tot)
gate-drain charge
total gate charge
Avalanche ruggedness
E_DS(AL)S
non-repetitive
drain-source
avalanche energy
Conditions
T_j ≥ 25 °C; T_j ≤ 175 °C
T_mb = 25 °C; V_GS = 10 V;
see Figure 1
T_mb = 25 °C; see Figure 2
V_GS = 10 V; I_D = 15 A;
T_j = 25 °C
V_GS = 4.5 V; I_D = 10 A;
V_DS = 12 V; see Figure 14;
see Figure 15
V_GS = 10 V; T_j(init) = 25 °C;
I_D = 100 A; V_sup ≤ 30 V;
R_GS = 50 Ω; unclamped
[1] Continuous current is limited by package.
Min Typ Max Unit
-
-
30 V
[1] _-
-
100 A
-
-
-55 -
88 W
175 °C
-
1.79 2.4 mΩ
-
6.5 -
nC
-
27 -
nC
-
-
103 mJ