PHD77NQ03T Datasheet, PDF (1/13 Pages) NXP Semiconductors – N-channel TrenchMOS FET

PHD/PHU77NQ03T
N-channel TrenchMOS FET
Rev. 01 — 28 November 2006
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using
TrenchMOS technology.
1.2 Features
I Fast switching
I Low thermal resistance
1.3 Applications
I DC-to-DC converters
I Computer motherboard
1.4 Quick reference data
I V_DS ≤ 25 V
I R_DSon ≤ 9.5 mΩ
I I_D ≤ 75 A
I Q_GD = 3.2 nC (typ)
2. Pinning information
Table 1. Pinning
Pin
Description
1
gate (G)
2
drain (D)
3
source (S)
mb
mounting base; connected to
drain (D)
Simplified outline
[1]
mb
2
1
3
SOT428 (DPAK)
[1] It is not possible to make a connection to pin 2 of the SOT428 package.
Symbol
mb
D
123
SOT533 (IPAK)
G
mbb076 S