BTA208S-600B_11 Datasheet, PDF (1/13 Pages) NXP Semiconductors – 3Q Hi-Com Triac Triggering in three quadrants only

BTA208S-600B
3Q Hi-Com Triac
Rev. 3 — 13 April 2011
Product data sheet
1. Product profile
1.1 General description
Planar passivated high commutation three quadrant triac in a SOT428 surface-mountable
plastic package. This "series B" triac is intended for use in circuits where high static and
dynamic dV/dt and high dI/dt can occur. The "series B" will commutate the full rated RMS
current at the maximum rated junction temperature, without the aid of a snubber.
1.2 Features and benefits
„ 3Q technology for improved noise
immunity
„ High commutation capability with
maximum false trigger immunity
„ High immunity to false turn-on by dV/dt
„ High voltage capability
„ Planar passivated for voltage
ruggedness and reliability
„ Surface-mountable package
„ Triggering in three quadrants only
1.3 Applications
„ Electronic thermostats
„ General purpose motor controls
„ Rectifier-fed DC inductive loads e.g.
DC motors and solenoids
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
V_DRM
repetitive peak
off-state voltage
I_TSM
non-repetitive
full sine wave; T_j(init) = 25 °C;
peak on-state
t_p = 20 ms; see Figure 4;
current
see Figure 5
I_T(RMS)
RMS on-state
current
full sine wave; T_mb ≤ 102 °C;
see Figure 1; see Figure 2;
see Figure 3
Static characteristics
I_GT
gate trigger
V_D = 12 V; I_T = 0.1 A; T2+ G+;
current
T_j = 25 °C; see Figure 7
V_D = 12 V; I_T = 0.1 A; T2+ G-;
T_j = 25 °C; see Figure 7
V_D = 12 V; I_T = 0.1 A; T2- G-;
T_j = 25 °C; see Figure 7
Min Typ Max Unit
-
-
600 V
-
-
65 A
-
-
8
A
2 18 50 mA
2 21 50 mA
2 34 50 mA