BLF4G22-100 Datasheet, PDF (1/14 Pages) NXP Semiconductors – UHF power LDMOS transistor

BLF4G22-100; BLF4G22S-100
UHF power LDMOS transistor
Rev. 01 — 10 January 2006
Product data sheet
1. Product profile
1.1 General description
100 W LDMOS power transistor for base station applications at frequencies from
2000 MHz to 2200 MHz.
Table 1: Typical performance
T_case = 25 °C; in a common source class-AB test circuit; I_Dq = 900 mA; typical values
Mode of operation f
(MHz)
V_DS
P_L
(V) (W)
G_p
(dB)
η_D
IMD3
(%) (dBc)
2-carrier
W-CDMA ^[1]
f₁ = 2135; f₂ = 2145 28
25 (AV) 13.5 26
−37
ACPR
(dBc)
−41
[1] 10 MHz carrier spacing PAR 7 dB at 0.01 % probability on CCDF, 3GPP test model 1, 1 to 64 DPCH.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
s Typical 2-Carrier W-CDMA performance at a supply voltage of 28 V and an I_Dq of
900 mA:
x Load power = 25 W (AV)
x Gain = 13.5 dB (typ)
x Efficiency = 26 % (typ)
x ACPR = −41 dBc (typ)
x IMD3 = −37 dBc (typ)
s Easy power control
s Integrated ESD protection
s Excellent ruggedness > 10 : 1 VSWR at 100 W CW
s High efficiency
s High peak power capability (> 150 W)
s Excellent thermal stability
s Designed for broadband operation (2000 MHz to 2200 MHz)
s Internally matched for ease of use