BAS32L_08 Datasheet, PDF (1/10 Pages) NXP Semiconductors – High-speed switching diode

BAS32L
High-speed switching diode
Rev. 06 — 29 October 2008
Product data sheet
1. Product profile
1.1 General description
Single high-speed switching diode, fabricated in planar technology, and encapsulated in a
small hermetically sealed glass SOD80C Surface-Mounted Device (SMD) package.
1.2 Features
I High switching speed: t_rr ≤ 4 ns
I Reverse voltage: V_R ≤ 75 V
I Repetitive peak reverse voltage: V_RRM ≤ 100 V
I Repetitive peak forward current: I_FRM ≤ 450 mA
I Small hermetically sealed glass SMD package
1.3 Applications
I High-speed switching
I Reverse polarity protection
1.4 Quick reference data
Table 1.
Symbol
I_F
I_FRM
V_R
V_F
t_rr
Quick reference data
Parameter
forward current
repetitive peak forward
current
reverse voltage
forward voltage
reverse recovery time
Conditions
I_F = 100 mA
Min Typ Max Unit
[1] _-
-
200 mA
-
-
450 mA
-
-
75
V
-
-
1000 mV
[2] _-
-
4
ns
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] When switched from I_F = 10 mA to I_R = 10 mA; R_L = 100 Ω; measured at I_R = 1 mA.