NAND02G-B2D Datasheet, PDF (7/69 Pages) Numonyx B.V – 2-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, NAND flash memories

NAND02G-B2D
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Description
Description
The NAND02G-B2D devices are part of the NAND flash 2112-byte/1056-word page family
of non-volatile flash memories. They use NAND cell technology and have a density of
2 Gbits.
These devices have a memory array that is split into 2 planes of 1024 blocks each. This
multiplane architecture makes it possible to program 2 pages at a time (one in each plane),
or to erase 2 blocks at a time (one in each plane). This feature reduces the average program
and erase times by 50%.
The NAND02G-B2D devices operate from a 1.8 V or 3 V voltage supply. Depending on
whether the device has a x8 or x16 bus width, the page size is 2112 bytes (2048 + 64 spare)
or 1056 words (1024 + 32 spare), respectively.
The address lines are multiplexed with the data input/output signals on a multiplexed x 8
input/output bus. This interface reduces the pin count and makes it possible to migrate to
other densities without changing the footprint.
Each block can be programmed and erased over 100,000 cycles with ECC (error correction
code) on. To extend the lifetime of NAND flash devices, the implementation of an ECC is
mandatory.
A write protect pin is available to provide hardware protection against program and erase
operations.
The devices feature an open-drain ready/busy output that identifies if the P/E/R
(program/erase/read) controller is currently active. The use of an open-drain output allows
the ready/busy pins from several memories to connect to a single pull-up resistor.
A Copy Back Program command is available to optimize the management of defective
blocks. When a page program operation fails, the data can be programmed in another page
without having to resend the data to be programmed. An embedded error detection code is
automatically executed after each copy back operation: 1 error bit can be detected for every
528 bits. With this feature it is no longer necessary to use an external 2-bit ECC to detect
copy back operation errors.
The devices have a cache read feature that improves the read throughput for large files.
During cache reading, the device loads the data in a Cache register while the previous data
is transferred to the I/O buffers to be read.
The devices have the Chip Enable ‘don’t care’ feature, which allows code to be directly
downloaded by a microcontroller. This is possible because Chip Enable transitions during
the latency time do not stop the read operation.
The NAND02G-B2D devices support the ONFI 1.0 specification.
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