NAND02G-B2D Datasheet, PDF (1/69 Pages) Numonyx B.V – 2-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, NAND flash memories

NAND02G-B2D
2-Gbit, 2112-byte/1056-word page
multiplane architecture, 1.8 V or 3 V, NAND flash memories
Preliminary Data
Features
■ High density NAND flash memory
– Up to 2 Gbits of memory array
– Cost-effective solution for mass storage
applications
■ NAND interface
– x8 or x16 bus width
– Multiplexed address/data
■ Supply voltage: 1.8 V or 3.0 V device
■ Page size
– x8 device: (2048 + 64 spare) bytes
– x16 device: (1024 + 32 spare) words
■ Block size
– x8 device: (128 K + 4 K spare) bytes
– x16 device: (64 K + 2 K spare) words
■ Multiplane architecture
– Array split into two independent planes
– Program/erase operations can be
performed on both planes at the same time
■ Page read/program
– Random access: 25 µs (max)
– Sequential access: 25 ns (min)
– Page program time: 200 µs (typ)
– Multiplane page program time (2 pages):
200 µs (typ)
■ Copy back program with automatic EDC (error
detection code)
■ Cache read mode
■ Fast block erase
– Block erase time: 1.5 ms (typ)
– Multiblock erase time (2 blocks): 1.5 ms
(typ)
TSOP48 12 x 20 mm (N)
FBGA
VFBGA63 9.5 x 12 mm (ZA)
■ Status register
■ Electronic signature
■ Chip Enable ‘don’t care’
■ Serial number option
■ Data protection:
– Hardware program/erase disabled during
power transitions
– Non-volatile protection option
■ ONFI 1.0 compliant command set
■ Data integrity
– 100,000 program/erase cycles (with ECC)
– 10 years data retention
■ ECOPACK^® packages
Table 1. Device summary
Reference
Part number
NAND02G-B2D
NAND02GR3B2D
NAND02GW3B2D
NAND02GR4B2D⁽¹⁾
NAND02GW4B2D⁽¹⁾
1. x 16 organization only available for MCP products.
April 2008
Rev 3
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
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