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M58LT128HST Datasheet, PDF (68/110 Pages) STMicroelectronics – 128-Mbit (8 Mb ×16, Multiple Bank, Multilevel interface, Burst) 1.8 V supply, Secure Flash memories
DC and AC parameters
M58LT128HST, M58LT128HSB
Table 25. Write AC characteristics, Chip Enable controlled(1)
Symbol
Alt
Parameter
M58LT128HST/B
Unit
85
tAVAV
tWC Address Valid to Next Address Valid
Min
85
ns
tAVEH
Address Valid to Chip Enable High
Min
50
ns
tAVLH
Address Valid to Latch Enable High
Min
10
ns
tDVEH
tDS Data Valid to Chip Enable High
Min
50
ns
tEHAX
tAH Chip Enable High to Address Transition
Min
0
ns
tEHDX
tDH Chip Enable High to Input Transition
Min
0
ns
tEHEL tCPH Chip Enable High to Chip Enable Low
Min
25
ns
tEHGL
Chip Enable High to Output Enable Low
Min
0
ns
tEHWH tCH Chip Enable High to Write Enable High
Min
0
ns
tELKV
Chip Enable Low to Clock Valid
Min
9
ns
tELEH
tCP Chip Enable Low to Chip Enable High
Min
50
ns
tELLH
Chip Enable Low to Latch Enable High
Min
10
ns
tELQV
Chip Enable Low to Output Valid
Min
85
ns
tGHEL
Output Enable High to Chip Enable Low
Min
17
ns
tLHAX
Latch Enable High to Address Transition
Min
9
ns
tLLLH
tWHEL(2)
Latch Enable Pulse Width
Min
10
ns
Write Enable High to Chip Enable Low
Min
25
ns
tWLEL
tCS Write Enable Low to Chip Enable Low
Min
0
ns
tEHVPL
Chip Enable High to VPP Low
Min
200
ns
tQVVPL
Output (Status Register) Valid to VPP Low Min
0
ns
tVPHEH tVPS VPP High to Chip Enable High
Min
200
ns
1. Sampled only, not 100% tested.
2. tWHEL has this value when reading in the targeted bank or when reading following a Set Configuration
Register command. System designers should take this into account and may insert a software No-Op
instruction to delay the first read in the same bank after issuing any command and to delay the first read to
any address after issuing a Set Configuration Register command. If the first read after the command is a
Read Array operation in a different bank and no changes to the Configuration Register have been issued,
tWHEL is 0 ns.
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