M58LT128HST Datasheet, PDF (1/110 Pages) STMicroelectronics – 128-Mbit (8 Mb ×16, Multiple Bank, Multilevel interface, Burst) 1.8 V supply, Secure Flash memories

M58LT128HST
M58LT128HSB
128 Mbit (8 Mb ×16, multiple bank, multilevel interface, burst)
1.8 V supply, secure Flash memories
Features
■ Supply voltage
– V_DD = 1.7 V to 2.0 V for Program, Erase
and Read
– V_DDQ = 2.7 V to 3.6 V for I/O buffers
– V_PP = 9 V for fast program
■ Synchronous/Asynchronous Read
– Synchronous Burst Read mode: 52 MHz
– Asynchronous Page Read mode
– Random access: 85 ns
■ Synchronous Burst Read Suspend
■ Programming time
– 2.5 µs typical word program time using
Buffer Enhanced Factory Program
command
■ Memory organization
– Multiple bank memory array: 8-Mbit banks
– Parameter blocks (top or bottom location)
■ Dual operations
– program/erase in one bank while read in
others
– No delay between Read and Write
operations
■ Block protection
– All blocks protected at power-up
– Any combination of blocks can be protected
with zero latency
– Absolute write protection with V_PP = V_SS
■ Security
– Software security features
– 64-bit unique device number
– 2112-bit user programmable OTP Cells
■ Common flash interface (CFI)
■ 100 000 program/erase cycles per block
BGA
TBGA64 (ZA)
10 × 13 mm
■ Electronic signature
– Manufacturer code: 20h
– Top device codes:
M58LT128HST: 88D6h
– Bottom device codes
M58LT128HSB: 88D7h
■ TBGA64 package
– ECOPACK® available
December 2007
Rev 3
1/110
www.numonyx.com
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