M29DW640F Datasheet, PDF (62/74 Pages) Numonyx B.V – 64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory

Common Flash Interface (CFI)
M29DW640F
Table 28. Device Geometry Definition
Address
x16
x8
Data
Description
Value
27h
4Eh
0017h Device Size = 2ⁿ in number of Bytes
8 MBytes
28h
50h
0002h
Flash Device Interface Code description
29h
52h
0000h
x8, x16
Async.
2Ah
54h
0003h _{Maximum number of Bytes in multi-Byte program or page = 2n}
8
2Bh
56h
0000h
2Ch
58h
0003h
Number of Erase Block Regions⁽¹⁾. It specifies the number of
regions containing contiguous Erase Blocks of the same size.
3
2Dh
5Ah
0007h Erase Block Region 1 Information
8
2Eh
5Ch
0000h Number of Erase Blocks of identical size = 0007h+1
2Fh
5Eh
0020h Erase Block Region 1 Information
30h
60h
0000h Block size in Region 1 = 0020h * 256 Byte
8 KBytes
31h
62h
007Dh Erase Block Region 2 Information
126
32h
64h
0000h Number of Erase Blocks of identical size = 007Dh+1
33h
66h
0000h Erase Block Region 2 Information
34h
68h
0001h Block size in Region 2 = 0100h * 256 Byte
64 KBytes
35h
6Ah
0007h Erase Block Region 3 information
8
36h
6Ch
0000h Number of Erase Blocks of identical size = 0007h + 1
37h
6Eh
0020h Erase Block Region 3 information
38h
70h
0000h Block size in region 3 = 0020h * 256 Bytes
8 KBytes
1. Erase Block Region 1 corresponds to addresses 000000h to 007FFFh; Erase block Region 2 corresponds to addresses
008000h to 3F7FFFh and Erase Block Region 3 corresponds to addresses 3F8000h to 3FFFFFh.
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