M29DW640F Datasheet, PDF (1/74 Pages) Numonyx B.V – 64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory

M29DW640F
64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block)
3V Supply Flash Memory
Feature summary
■ Supply voltage
– V_CC = 2.7V to 3.6V for Program, Erase and
Read
– V_PP =12V for Fast Program (optional)
■ Asynchronous Page Read mode
– Page Width 8 Words
– Page Access 25, 30ns
– Random Access 60, 70ns
■ Programming time
– 10µs per Byte/Word typical
– 4 Words / 8 Bytes at-a-time Program
■ Memory blocks
– Quadruple Bank Memory Array:
8Mbit+24Mbit+24Mbit+8Mbit
– Parameter Blocks (at both Top and Bottom)
■ Dual operations
– While Program or Erase in a group of
banks (from 1 to 3), Read in any of the
other banks
■ Program/Erase Suspend and Resume
– Read from any Block during Program
Suspend
– Read and Program another Block during
Erase Suspend
■ Unlock Bypass Program command
– Faster Production/Batch Programming
■ V_PP/WP pin for Fast Program and Write Protect
■ Temporary Block Unprotection mode
■ Common Flash Interface
– 64 bit Security Code
■ Extended Memory Block
– Extra block used as security block or to
store additional information
TSOP48 (N)
12 x 20mm
FBGA
TFBGA48 (ZE)
6 x 8 mm
■ Low power consumption
– Standby and Automatic Standby
■ 100,000 Program/Erase cycles per block
■ Electronic Signature
– Manufacturer Code: 0020h
– Device Code: 227Eh + 2202h + 2201
■ ECOPACK^® packages available
December 2007
Rev 4
1/74
www.numonyx.com
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