PC28F128P33BF60A Datasheet, PDF (58/88 Pages) Numonyx B.V – Numonyx® P33-65nm Flash Memory

P33-65nm
15.5 Program and Erase Characteristics
Table 26: Program and Erase Specifications
Num
Symbol
Parameter
Min
V_PPL
Typ Max
Min
V_PPH
Typ
Max
Unit
Note
Conventional Word Programming
W200
t_PROG/W
Program
Time
Single word
-
40 175
-
40 175
µs
1
Buffered Programming
Aligned 16-Wd, BP time
(32 Words)
-
70 200
-
70 200
W250
t_PROG/
Buffer
Program
Time
Aligned 32-Wd, BP time
(32 Word)
-
85 200
-
85 200
µs
1
one full buffer (256
Words)
-
284 1280 -
160 800
Buffered Enhanced Factory Programming
W451
W452
t_BEFP/B
t_BEFP/Setup
Program
Single byte
N/A N/A N/A
-
0.31
-
BEFP Setup
N/A N/A N/A 10
-
-
Erase and Suspend
1,2
µs
1
W500
W501
W600
W601
W602
t_ERS/PB
t_ERS/MB
t_SUSP/P
t_SUSP/E
t_ERS/SUSP
Erase Time
Suspend
Latency
32-KByte Parameter
128-KByte Main
Program suspend
Erase suspend
Erase to Suspend
-
0.4 2.5
-
0.4 2.5
s
-
0.5 4.0
-
0.5 4.0
1
-
20
25
-
20
25
-
20
25
-
20
25
µs
-
500
-
-
500
-
1,3
blank check
W702
t_BC/MB
blank check Main Array Block
-
3.2
-
-
3.2
-
ms
-
Notes:
1.
Typical values measured at T_C = +25 °C and nominal voltages. Performance numbers are valid for all speed versions.
Excludes system overhead. Sampled, but not 100% tested.
2.
Averaged over entire device.
3.
W602 is the typical time between an initial block erase or erase resume command and the a subsequent erase suspend
command. Violating the specification repeatedly during any particular block erase may cause erase failures.
Datasheet
58
Jul 2011
Order Number: 208034-04