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PC28F128P33BF60A Datasheet, PDF (1/88 Pages) Numonyx B.V – Numonyx® P33-65nm Flash Memory | |||
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Numonyx® P33-65nm Flash Memory
128-Mbit, 64-Mbit Single Bit per Cell (SBC)
Product Features
Datasheet
 High performance:
 Security:
â 60ns initial access time for Easy BGA
â One-Time Programmable Registers:
â 70ns initial access time for TSOP
â 25ns 8-word asynchronous-page read
mode
â 52MHz with zero wait states, 17ns clock-to-
data output synchronous-burst read mode
â 4-, 8-, 16-, and continuous-word options
for burst mode
â 64 OTP bits, programmed with unique
information by Numonyx
â 2112 OTP bits, available for customer
programming
â Absolute write protection: VPP = VSS
â Power-transition erase/program lockout
â Individual zero-latency block locking
â 3.0V buffered programming at 1.8MByte/s
(Typ) using 256-word buffer
â Buffered Enhanced Factory Programming at
3.2MByte/s (typ) using 256-word buffer
 Architecture:
â Asymmetrically-blocked architecture
â Four 32-KByte parameter blocks: top or
bottom configuration
â 128-KByte main blocks
â Individual block lock-down capability
â Password Access feature
 Software:
â 20µs (Typ) program suspend
â 20µs (Typ) erase suspend
â Basic Command Set and Extended Function
Interface (EFI) Command Set compatible
â Common Flash Interface capable
â Blank Check to verify an erased block
 Voltage and Power:
â VCC (core) voltage: 2.3V â 3.6V
â VCCQ (I/O) voltage: 2.3V â 3.6V
â Standby current: 35μA(Typ) for 64-Mbit,
50μA(Typ) for 128-Mbit
â Continuous synchronous read current:
23mA (Typ) at 52 MHz
 Density and Packaging:
â 56-Lead TSOP package (128-Mbit, 64-Mbit)
â 64-Ball Easy BGA package (128-Mbit, 64-
Mbit)
â 16-bit wide data bus
 Quality and Reliability:
â JESD47E Compliant
â Operating temperature: â40°C to +85°C
â Minimum 100,000 erase cycles per block
â 65nm process technology
Datasheet
1
Jul 2011
Order Number: 208034-04
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