NAND512R3A2SN6F Datasheet, PDF (34/55 Pages) Numonyx B.V – 512-Mbit, 528-byte/264-word page, 1.8 V/3 V, SLC NAND flash memories

Program and erase times and endurance cycles
NAND512-A2C
8
Program and erase times and endurance cycles
The program and erase times and the number of program/erase cycles per block are shown
in Table 14.
Table 14. Program, erase times and program erase endurance cycles
Parameters
NAND flash
Min
Typ
Max
Page program time
200
500
Block erase time
2
3
Program/erase cycles per block (with ECC) 100,000
Data retention
10
Unit
µs
ms
cycles
years
9
Maximum ratings
Stressing the device above the ratings listed in Table 15: Absolute maximum ratings, may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the operating sections of
this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.
Table 15. Absolute maximum ratings
Symbol
Parameter
Value
Unit
Min
Max
T_BIAS
T_STG
T_LEAD
V_IO(1)
V_DD
Temperature under bias
Storage temperature
Lead temperature during soldering
Input or output voltage
1.8 V devices
3 V devices
Supply voltage
1.8 V devices
3 V devices
– 50
– 65
– 0.6
– 0.6
– 0.6
– 0.6
125
°C
150
°C
260
°C
2.7
V
4.6
V
2.7
V
4.6
V
1. Minimum voltage may undershoot to –2 V for less than 20 ns during transitions on input and I/O pins.
Maximum voltage may overshoot to V_DD + 2 V for less than 20 ns during transitions on I/O pins.
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