NAND512R3A2SN6F Datasheet, PDF (1/55 Pages) Numonyx B.V – 512-Mbit, 528-byte/264-word page, 1.8 V/3 V, SLC NAND flash memories

NAND512R3A2C
NAND512R4A2C NAND512W3A2C
512-Mbit, 528-byte/264-word page,
1.8 V/3 V, SLC NAND flash memories
Not For New Design
Features
● High density NAND flash memories
– 512-Mbit memory array
– Cost effective solutions for mass storage
applications
● NAND interface
– x8 or x16 bus width
– Multiplexed address/ data
● Supply voltage: 1.8 V, 3 V
● Page size
– x8 device: (512 + 16 spare) bytes
– x16 device: (256 + 8 spare) words
● Block size
– x8 device: (16K + 512 spare) bytes
– x16 device: (8K + 256 spare) words
● Page read/program
– Random access:
12 µs (3 V)/15 µs (1.8 V) (max)
– Sequential access:
30 ns (3 V)/50 ns (1.8 V) (min)
– Page program time: 200 µs (typ)
● Copy back program mode
● Fast block erase: 2 ms (typ)
● Status register
● Electronic signature
● Chip Enable ‘don’t care’
● Security features
– OTP area
TSOP48 12 x 20 mm (N)
FBGA
VFBGA55 8 x 10 x 1.05 mm (ZD)
VFBGA63 9 x 11 x 1.05 mm (ZA)
– Serial number (unique ID) option
● Hardware data protection
– Program/erase locked during power
transitions
● Data integrity
– 100,000 program/erase cycles (with ECC)
– 10 years data retention
● RoHS compliant packages
● Development tools
– Error correction code models
– Bad blocks management and wear leveling
algorithms
– Hardware simulation models
Table 1.
Device summary
Reference
NAND512-A2C
Root part number
NAND512R3A2C
NAND512R4A2C
NAND512W3A2C
June 2009
Rev 5
This is information on a product still in production but not recommended for new designs.
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