M29W160ET70N3E Datasheet, PDF (22/42 Pages) Numonyx B.V – 16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory

M29W160ET, M29W160EB
Table 10. Device Capacitance
Symbol
Parameter
C_IN
Input Capacitance
C_OUT
Output Capacitance
Note: Sampled only, not 100% tested.
Table 11. DC Characteristics
Symbol
Parameter
I_LI
Input Leakage Current
I_LO
Output Leakage Current
I_CC1
Supply Current (Read)
I_CC2
Supply Current (Standby)
I_CC3 ⁽¹⁾
Supply Current
(Program/Erase)
V_IL
Input Low Voltage
V_IH
Input High Voltage
V_OL
Output Low Voltage
V_OH
Output High Voltage
V_ID
Identification Voltage
I_ID
Identification Current
V_LKO
Program/Erase Lockout
Supply Voltage
Note: 1. Sampled only, not 100% tested.
Test Condition
V_IN = 0V
V_OUT = 0V
Min
Max
Unit
6
pF
12
pF
Test Condition
Min
Typ
Max
Unit
0V  V_IN  V_CC
±1
µA
0V  V_OUT  V_CC
±1
µA
E = V_IL, G = V_IH,
f = 6MHz
4.5
10
mA
E = V_CC ±0.2V,
RP = V_CC ±0.2V
35
100
µA
Program/Erase
Controller active
20
mA
–0.5
0.8
V
0.7V_CC
V_CC +0.3
V
I_OL = 1.8mA
I_OH = –100µA
V_CC –0.4
0.45
V
V
11.5
12.5
V
A9 = V_ID
100
µA
1.8
2.3
V
22/42