M29W160ET70N3E Datasheet, PDF (1/42 Pages) Numonyx B.V – 16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory

M29W160ET
M29W160EB
16 Mbit (2Mb x8 or 1Mb x16, Boot Block)
3V Supply Flash Memory
FEATURES SUMMARY
 SUPPLY VOLTAGE
– V_CC = 2.7V to 3.6V for Program, Erase
and Read
 ACCESS TIMES: 70, 90ns
 PROGRAMMING TIME
– 10µs per Byte/Word typical
 35 MEMORY BLOCKS
– 1 Boot Block (Top or Bottom Location)
– 3 Parameter and 31 Main Blocks
 PROGRAM/ERASE CONTROLLER
– Embedded Byte/Word Program
algorithms
 ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
Erase Suspend
 UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
 TEMPORARY BLOCK UNPROTECTION
MODE
 COMMON FLASH INTERFACE
– 64 bit Security Code
 LOW POWER CONSUMPTION
– Standby and Automatic Standby
 100,000 PROGRAM/ERASE CYCLES per
BLOCK
 ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Top Device Code M29W160ET: 22C4h
– Bottom Device Code M29W160EB: 2249h
 Automotive Grade Parts Available
Figure 1. Packages
TSOP48 (N)
12 x 20mm
FBGA
TFBGA48 (ZA)
6 x 8mm
BGA
FBGA64 (ZS)
11 x 13 mm
April 2011
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