313295-04 Datasheet, PDF (19/98 Pages) Numonyx B.V – Numonyx StrataFlash Wireless Memory

Numonyx™ StrataFlash^® Wireless Memory (L18 AD-Mux)
Table 7: DC Current Characteristics (Sheet 2 of 2)
Sym
Parameter
V_CC
V_CCQ
1.7 V – 2.0 V
1.7 V – 2.0 V
1.35 V – 2.0 V
Unit
Test Conditions
Notes
Typ
Max
I_PPR V_PP Read
2
15
µA V_PP ≤ V_CC
I_PPW V_PP Program Current
0.05
0.10
V_PP = V_PPL, program in progress
mA
8
22
V_PP = V_PPH, program in progress
1,3
I_PPE V_PP Erase Current
0.05
8
0.10
22
V_PP = V_PPL, erase in progress
mA
V_PP = V_PPH, erase in progress
Notes:
1.
All currents are RMS unless noted. Typical values at typical V_CC, T_C = +25°C.
2.
I_CCS is the average current measured over any 5 ms time interval 5 µs after CE# is deasserted.
3.
Sampled, not 100% tested.
4.
V_CC read + program current is the sum of V_CC read and V_CC program currents.
5.
V_CC read + erase current is the sum of V_CC read and V_CC erase currents.
6.
I_CCES is specified with the device deselected. If device is read while in erase suspend, current is I_CCES plus I_CCR
7.
I_CCW, I_CCE measured over typical or max times specified in Section 7.7, “Program and Erase
Characteristics” on page 32.
6.2
DC Voltage Characteristics
Table 8: DC Voltage Characteristics
Sym
Parameter
V_CC
Q
1.35 V – 2.0 V
Min
Max
1.7 V – 2.0 V
Min
Max
Unit
Test Condition
V_IL Input Low Voltage
V_IH Input High Voltage
0
0.2
0
0.4
V
V_CCQ
–0.2
V_CCQ
V_CCQ
–0.4
V_CCQ
V
V_OL Output Low Voltage
V_CC = V_CCMIN
0.1
0.1
V V_CCQ = V_CCQMIN
I_OL = 100 µA
V_OH Output High Voltage
V_CCQ
–0.1
V_CCQ
–0.1
V_CC = V_CCMIN
V V_CCQ = V_CCQMIN
I_OH = –100 µA
V_PPLK V_PP Lock-Out Voltage
0.4
0.4
V
V_LKO V_CC Lock Voltage
1.0
1.0
V
V_LKOQ V_CCQ Lock Voltage
0.9
0.9
V
Notes:
1.
V_IL can undershoot to –0.4V and V_IH can overshoot to V_CCQ+0.4V for durations of 20 ns or less.
2.
V_PP < V_PPLK inhibits erase and program operations. Do not use V_PPL and V_{PPH outside their valid ranges.}
Notes
1
2
November 2007
Order Number: 313295-04
Datasheet
19