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313295-04 Datasheet, PDF (1/98 Pages) Numonyx B.V – Numonyx StrataFlash Wireless Memory | |||
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Numonyx⢠StrataFlash® Wireless Memory
(L18) with AD-Multiplexed I/O
Product Features
Datasheet
 High performance Read-While-Write/Erase
â 85 ns initial access
â 54MHz with zero wait state, 14 ns clock-to-
data output synchronous-burst mode
â 4-, 8-, 16-, and continuous-word burst
mode
â Burst suspend
â Programmable WAIT configuration
â Buffered Enhanced Factory Programming
(Buffered EFP): 5 µs/byte (Typ)
â 1.8 V low-power buffered and non-buffered
programming @ 7 µs/byte (Typ)
 Architecture
â Asymmetrically-blocked architecture
â Multiple 8-Mbit partitions: 64Mb and 128Mb
devices
â Multiple 16-Mbit partitions: 256Mb devices
â Four 16-KWord parameter blocks: top
configuration
â 64-KWord main blocks
â Dual-operation: Read-While-Write (RWW)
or Read-While-Erase (RWE)
â Status register for partition and device
status
 Density and Packaging
â 64-, 128-, and 256 Mbit density in VF BGA
package
â 16-bit wide data bus
 Power
â 1.7 V to 2.0 V VCC operation
â I/O voltage: 1.35 V â 2.0 V, 1.7 Vâ 2.0 V
â Standby current: 25 µA (Typ) for 256-Mbit
â 4-Word synchronous read current: 15 mA
(Typ) @ 54 MHz
â Automatic Power Savings (APS) mode
 Security
â OTP space:
⢠64 unique device identifier bits
⢠64 user-programmable OTP bits
⢠Additional 2048 user-programmable OTP
bits
â Absolute write protection: VPP = GND
â Power-transition erase/program lockout
â Individual zero-latency block locking
â Individual block lock-down
 Software
â 20 µs (Typ) program suspend
â 20 µs (Typ) erase suspend
â Intel® Flash Data Integrator (FDI)
optimized
â Basic Command Set (BCS) and Extended
Command Set (ECS) compatible
â Common Flash Interface (CFI) capable
 Quality and Reliability
â Expanded temperature: â25° C to +85° C
â Minimum 100,000 erase cycles per block
â Intel ETOX* VIII process technology (0.13
µm)
313295-04
November 2007
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