M58PR512LE Datasheet, PDF (1/123 Pages) Numonyx B.V – 512-Mbit or 1-Gbit (× 16, multiple bank, multilevel, burst) 1.8 V supply Flash memories

M58PR512LE M58PR001LE
512-Mbit or 1-Gbit (× 16, multiple bank, multilevel, burst)
1.8 V supply Flash memories
Features
■ Supply voltage
– V_DD = 1.7 V to 2.0 V for program, erase
and read
– V_DDQ = 1.7 V to 2.0 V for I/O buffers
– V_PP = 9 V for fast program
■ Synchronous/asynchronous read
– Synchronous burst read mode:
108 MHz, 66 MHz
– Asynchronous page read mode
– Random access: 96 ns
■ Programming time
– 4.2 µs typical word program time using
Buffer Enhanced Factory Program
command
■ Memory organization
– Multiple bank memory array:
64 Mbit banks (512 Mb devices)
128 Mbit banks (1 Gb devices)
– Four EFA (extended flash array) blocks of
64 Kbits
■ Dual operations
– Program/erase in one bank while read in
others
– No delay between read and write
operations
■ Block locking
– All blocks locked at power-up
– Any combination of blocks can be locked
with zero latency
– WP for block lock-down
– Absolute Write protection with V_PP = V_SS
FBGA
TFBGA105 (ZAD)
9 x 11 mm
TFBGA107 (ZAC)
8 x 11 mm
■ Security
– 64 bit unique device number
– 2112 bit user programmable OTP cells
■ CFI (common flash interface)
■ 100 000 program/erase cycles per block
■ Electronic signature
– Manufacturer code: 20h
– 512 Mbit device: 8819
– 1 Gbit device: 880F
■ ECOPACK® package available.
March 2008
Rev 4
1/123
www.numonyx.com
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