M58LT256JST Datasheet, PDF (1/108 Pages) STMicroelectronics – 256 Mbit (16 Mb × 16, multiple bank, multilevel, burst) 1.8 V supply, secure Flash memories

M58LT256JST
M58LT256JSB
256 Mbit (16 Mb × 16, multiple bank, multilevel, burst)
1.8 V supply, secure Flash memories
Features
■ Supply voltage
– V_DD = 1.7 V to 2.0 V for program, erase
and read
– V_DDQ = 2.7 V to 3.6 V for I/O buffers
– V_PP = 9 V for fast program
■ Synchronous/asynchronous read
– Synchronous burst read mode: 52 MHz
– Random access: 85 ns
– Asynchronous page read mode
■ Synchronous burst read suspend
■ Programming time
– 5 µs typical word program time using Buffer
Enhanced Factory Program command
■ Memory organization
– Multiple bank memory array: 16 Mbit banks
– Parameter blocks (top or bottom location)
■ Dual operations
– Program/erase in one bank while read in
others
– No delay between read and write
operations
■ Block protection
– All blocks protected at power-up
– Any combination of blocks can be protected
with zero latency
– Absolute write protection with V_PP = V_SS
■ Security
– Software security features
– 64 bit unique device number
– 2112 bit user programmable OTP Cells
■ CFI (common Flash interface)
■ 100 000 program/erase cycles per block
BGA
TBGA64 (ZA)
10 x 13 mm
■ Electronic signature
– Manufacturer code: 20h
– Top device codes:
M58LT256JST: 885Eh
– Bottom device codes
M58LT256JSB: 885Fh
■ TBGA64 package
– ECOPACK® compliant
December 2007
Rev 4
1/108
www.numonyx.com
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