311760-10 Datasheet, PDF (1/54 Pages) Numonyx B.V – 128-Mbit W18 Family with Synchronous PSRAM

Numonyx™ Wireless Flash Memory
(W18 SCSP)
128-Mbit W18 Family with Synchronous PSRAM
Product Features
Datasheet
„ Device Architecture
„ Flash Performance
— Flash Die Density: 32, 64 or 128-Mbit
— PSRAM Die Density: 16 or 32-Mbit
— 60 ns Initial Read Access;
20 ns Asynchronous Page-Mode Read
— x16 Non-Mux or ADMux I/O Interface Option ^{— Up to 66 MHz with 11 ns Clock-to-Data}
— Bottom or Top Flash Parameter
Output Synchronous Burst-Mode Read
Configuration
— Enhanced Factory Programming Modes:
„ Device Voltage
3.1 µs/Word (Typ)
— Core: V_CC = 1.8 V
— I/O: V_CCQ = 1.8 V
„ Device Packaging
„ Flash Architecture
— Read-While-Write/Erase
— Asymmetrical blocking structure
— Ballout: QUAD+ (88 Balls)
— 4-KWord parameter blocks (Top or Bottom)
— Area: 8x10 mm
— 32-KWord main blocks
— Height: 1.2 mm
— 4-Mbit partition size
„ PSRAM Performance
— 128-bit One-Time Programmable (OTP)
Protection Register
— 70 ns Initial Read Access;
20 ns Asynchronous Page-Mode Read
— Zero-latency block locking
— Up to 66 MHz with 9 ns Clock-to-Data
— Absolute write protection with block lock
Synchronous Burst-Mode Reads and Writes
using F-VPP and F-WP#
— Configurable 4-, 8-, 16- and Continuous-
„ Flash Software
Word Burst-Length Reads and Writes
— Numonyx™ FDI, Numonyx™ PSM, and
— Partial-Array Self and Temperature-
Numonyx™ VFM
Compensated Refresh
— Common Flash Interface
— Programmable Output Impedance
— Basic and Extended Flash Command Set
„ Quality and Reliability
— Extended Temperature –25 °C to +85 °C
— Minimum 100K Flash Block Erase cycles
— 90 nm ETOX ™ IX Flash Technology
— 130 nm ETOX™ VIII Flash Technology
Order Number: 311760-10
November 2007