NTE2386 Datasheet, PDF (3/3 Pages) NTE Electronics – MOSFET N-Channel Enhancemen Mode, High Speed Switch

Thermal Resistance:
Parameter
Junction–to–Case
Case–to–Sink
Junction–to–Ambient
Symbol
Test Conditions
Min Typ Max Unit
R_thJC
–
– 1.0 °C/W
R_thCS Mounting surface flat, smooth, and greased – 0.12 – °C/W
R_thJA Typical socket mount
–
– 30 °C/W
Note 1. Repetitive Rating: Pulse Width limited by maximum junction temperature.
Note 2. V_DD = 60V, Starting T_J = 25°C, L = 27mH, R_G = 25Ω, Peak I_C = 6.2A
Note 3. I_SD ≤ 6.2A, di/dt = 80A/µs V_DD ≤ 3V_DSS, T_J ≤ 150°C, Suggested R_G = 9.1Ω
Note 4. Pulse width ≤ 300µs: Duty Cycle ≤ 2%.
.350 (8.89)
.135 (3.45) Max
.875 (22.2)
Dia Max
Seating
Plane
.312 (7.93) Min
Source
.215 (5.45)
.430
(10.92)
.040 (1.02)
1.187 (30.16)
.665
(16.9)
.156 (3.96) Dia
(2 Holes)
.188 (4.8) R Max
Gate
.525 (13.35) R Max
Drain/Case