NTE2386 Datasheet, PDF (2/3 Pages) NTE Electronics – MOSFET N-Channel Enhancemen Mode, High Speed Switch

Electrical Characteristics: (T_J = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Breakdown Voltage
Drain–to–Source
BV_DSS V_GS = 0V, I_D = 250µA
Static Drain–to–Source
On–State Resistance
R_DS(on) V_GS = 10V, I_D = 3.4A, Note 4
On–State Drain Current
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Forward Leakage Current
Gate–to–Source
I_D(on)
V_GS(HL)
gs
I_DSS
I_GSS
V_DS > I_D(on) x R_DS(on) Max,
V_GS = 10V, Note 4
V_DS = V_GS, I_D = 250µA
V_DS = 60V, I_DC = 3.4A, Note 4
V_DS = Max. Rating V_CS = 0V
V_DS = 0.8 x Max Rating , V_SS = 0V,
T_J = 125°C
V_GS = 20V
Reverse Leakage Current
Gate–to–Source
I_GSS V_GS = –20V
Total Gate Charge
Gate–to–Source Charge
Gate–to–Drain (“Miller”) Charge
Q_g
V_GS = 10V, I_D = 6.2A,
Qgs _{VDS = 0.8 x Max Rating}
Qgd ^{(independent of operating temperature)}
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Internal Drain Inductance
t_d(on)
t_r
t_d(off)
t_f
L_D
V_DD = 300V, f_D = 6.2A,
R_G = 9.1Ω, R_D = 47Ω
(independent at operating temperature)
Measured from the drain lead, 6mm
(0.25 In) from packaged to center of
die.
Internal Source Inductance
L_S Measured from the source lead, 6mm
(0.25 in) from package to source
bonding pad.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C_iss
C_oss
C_rss
V_GS = 0V, V_DS = 25V, f = 1.0MHz
Min Typ Max Unit
600 –
–
V
– 0.97 1.2 Ω
6.2 –
–
A
2.0 – 4.0 V
4.7 70 – mhos
–
– 250 µA
–
– 1000
–
– 100 nA
–
– –100 nA
– 4.0 80 nC
– 6.5 8.2 nC
– 20 30 nC
– 1.3 20 ns
– 18 27
– 65 83
– 20 20
– 5.0 – nH
– 18 –
– 1300 – pF
– 150 –
– 30 –
Source–Drain Diode Ratings and Characteristics:
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Forward Turn–On Time
I_S
–
– 6.2 A
I_SM Note 1
–
– 26 A
V_SO T_J = 25°C, I_S = 6.2A, V_GS = 0V, Note 4
–
– 1.5 V
t_rr
T_J = 25°C, I_F = 6.2A
di/dt = 100A/µs
1.8 3.6 7.9 µC
t_on Intrinsic turn–on time is negligible Turn on speed is substantially
controlled by L_S + L_D