NTE2333 Datasheet, PDF (3/3 Pages) NTE Electronics – Silicon NPN Power Transistor for Switching Power Applications

Electrical Characteristics (Cont’d): (T_C = +25°C, unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Switching Characteristics: Inductive Load (V_clamp = 300V, V_CC = 15V, l = 200µH)
Fall Time
t_fi
I_C = 1.5A, I_B1 = 130mA,
– 100 180 ns
I_B2 = 650mA
T_C = +125°C – 120 – ns
Storage Time
t_si
– 1.5 2.5 µs
T_C = +125°C – 1.9 – µs
Crossover Time
t_c
– 220 350 ns
T_C = +125°C – 230 – ns
Fall Time
t_fi
I_C = 3A, I_B1 = 600mA,
– 85 150 ns
I_B2 = 1.5A
T_C = +125°C – 120 – ns
Storage Time
t_si
– 2.15 3.2 µs
T_C = +125°C – 2.75 – µs
Crossover Time
t_c
– 200 300 ns
T_C = +125°C – 310 – ns
.420 (10.67)
Max
.110 (2.79)
.147 (3.75)
Dia Max
.500
(12.7)
Max
.070 (1.78) Max
Base
.100 (2.54)
.250 (6.35)
Max
.500
(12.7)
Min
Emitter
Collector/Tab