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NTE2333 Datasheet, PDF (2/3 Pages) NTE Electronics – Silicon NPN Power Transistor for Switching Power Applications
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Electrical Characteristics: (TC = +25°C, unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF Characteristics
Collector–Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON Characteristics
VCEO(sus
)
ICEO
ICES
IEBO
IC = 100mA, L = 25mH
VCE = 450V, IB = 0
VCE = 1000V, VEB = 0
VCE = 1000V, VEB = 0, TC = +125°C
VCE = 800V, VEB = 0, TC = +125°C
VEB = 9V, IC = 0
450 – – V
– – 100 µA
– – 100 µA
– – 500 µA
– – 100 µA
– – 100 µA
Base–Emitter Saturation Voltage
Collector–Emitter Saturation Voltage
VBE(sat)
VCE(sat)
IC = 1.3A, IB = 0.13A
IC = 3A, IB = 0.6A
IC = 1.3A, IB = 0.13A
IC = 3A, IB = 0.6A
DC Current Gain
hFE IC = 0.5A, VCE = 5V
IC = 3A, VCE = 1V
Dynamic Characteristics
IC = 1.3A, VCE = 1V
IC = 10mA, VCE = 5V
– 0.83 1.2 V
– 0.94 1.3 V
– 0.25 0.6 V
TC = +125°C – 0.27 0.65 V
– 0.35 0.7 V
TC = +125°C – 0.4 0.8 V
14 – 34
TC = +125°C – 32 –
6 10 – V
TC = +125°C 5
8
–
TC = +25°C 11 17 –
to +125°C
10 22 –
Current Gain Bandwidth Product
fT
IC = 0.5A, VCE = 10V, f = 1MHz
– 14 – MHz
Output Capacitance
Cob VCB = 10V, IB = 0, f = 1MHz
– 75 120 pF
Input Capacitance
Cib VEB = 8V
– 1000 1500 pF
Dynamic Saturation Voltage:
VCE(dsat)
IC = 1.3A,
1µs
– 5.5 – V
Determined 1µs and 3µs respectively
after rising IB1 reaches 90% of final
IB1 = 130mA,
VCC = 300V
TC = +125°C – 12.0 – V
IB1
3µs
– 3.0 – V
TC = +125°C – 7.0 – V
IC = 3.0A,
1µs
– 9.5 – V
IB1 = 600mA,
VCC = 300V
TC = +125°C – 14.5 – V
3µs
– 2.0 – V
TC = +125°C – 7.5 – V
Switching Characteristics: Resistive Load (DC ≤ 10%, Pulse Width = 20µs)
Turn–On Time
Turn–Off Time
Turn–On Time
Turn–Off Time
ton IC = 3A, IB1 = 600mA,
– 90 180 ns
IB2 = 1.5A, VCC = 300V TC = +125°C – 100 –
ns
toff
– 1.7 2.5 µs
TC = +125°C – 2.1 – µs
ton IC = 1.3A, IB1 = 130mA,
– 200 300 ns
IB2 = 650mA,
VCC = 300V
TC = +125°C – 130 – ns
toff
– 1.2 2.5 µs
TC = +125°C – 1.5 – µs
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