NTE596 Datasheet, PDF (2/2 Pages) NTE Electronics – Silicon Diode, Dual, Common Anode, High Speed

Electrical Characteristics (Per Diode): (T_J = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ
Reverse Recovery Time
(When switched from
I_F = 10mA to I_R = 10mA
Recovery Charge
(When switched from
I_F = 10mA to V_R = 5V
t_rr measured at I_R = 1mA,
–
–
R_L = 100Ω
Q_s R_L = 100Ω
–
–
Max Unit
6 ns
45 pC
.016 (0.48)
A
.098
(2.5)
K
K
Max
.074 (1.9)
.118 (3.0) Max
.037 (0.95)
.043 (1.1)
.051
(1.3)
.007 (0.2)