NTE596 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon Diode, Dual, Common Anode, High Speed

NTE596
Silicon Diode, Dual, Common Anode,
High Speed
Description:
The NTE596 consists of two silicon diodes in an SOT–23 type surface mount package. The anodes
are common and the device is intended for high–speed switching applications in thick and thin–film
circuits.
Absolute Maximum Ratings:
Continuous Reverse Voltage, V_R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V
Repetitive Peak Reverse Voltage, V_RRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V
Non–Repetitive Peak Forward Current (Per device, t = 1s), I_FSM . . . . . . . . . . . . . . . . . . . . . . . 500mA
Average Rectified Forward Current (Average over any 20ms period, Note 1), I_F(Av) . . . . . . 250mA
DC Forward Current, I_F . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mA
Repetitive Peak Forward Current, I_FRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mA
Total Power Dissipation (T_A ≤ +25°C), P_tot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW
Operating Junction Temperature, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +175°C
Thermal Resistance, Junction–to–Tab, R_thJT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60K/W
Thermal Resistance, Tab–to–Soldering Points, R_thTS . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 x 280K/W
Thermal Resistance, Soldering Points–to–Ambient (Note 2), R_thSA . . . . . . . . . . . . . . . . . 2 x 90K/W
Note 1. Measured under pulse conditions: t_p ≤ 0.5ms, I_F(AV) = 150mA, t_(av) ≤ 1ms, for sinusoidal
operation.
Note 2. Mounted on a ceramic substrate of .314 (8mm) x .393 (10mm) x .027 (0.7mm).
Electrical Characteristics (Per Diode): (T_J = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ
Forward Voltage
Reverse Current
Diode Capacitance
Forward Recovery Voltage
(When switched to I_F = 10mA)
V_F I_F = 1mA
–
–
I_F = 10mA
–
–
I_F = 50mA
–
–
I_F = 150mA
–
–
I_R V_R = 70V
–
–
V_R = 70V, T_J = +150°C
–
–
C_d V_R = 0, f = 1MHz
–
–
V_fr t_r = 20ns
–
–
Max Unit
715 mV
855 mV
1000 mV
1250 mV
2.5 µA
50 µA
2 pF
1.75 V