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| NTE583 Datasheet, PDF (2/2 Pages) NTE Electronics – Silicon Rectifier Diode Schottky, RF Switch | |||
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Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Units
Static Characteristics
Breakdown Voltage
Continuous Forward Voltage
Continuous Reverse Current
V(BR)
VF(1)
IR(1)
IR = 10µA
IF = 1mA
IF = 15mA
VR = 50V
70 â â V
â â 0.41 V
ââ1 V
â â 0.2 µA
Dynamic Characteristics
Small Signal Capacitance
Minority Carrier Life Time
C VR = 0, f = 1MHZ
â
Ï IF = 5mA, Krakauer Method â
â 2 pF
â 100 ps
Note 1. Pulse Test tp ⤠300µs δ < 2%
1.000
(25.4)
Min
.200
(5.08)
Max
.022 (.509) Dia Max
.090 (2.28)
Dia Max
Color Band Denotes Cathode
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