NTE583 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon Rectifier Diode Schottky, RF Switch

NTE583
Silicon Rectifier Diode
Schottky, RF Switch
Description:
The NTE583 is a metal to silicon junction diode featuring high breakdown, low turn–on voltage and
ultrafast switching. This device is primarly intented for high level UHF/VHF detection and pulse appli-
cation with broad dynamic range.
Absolute Maximum Ratings: (T_A = +25°C, Limiting Values)
Repetitive Peak Reverse Voltage, V_RRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V
Forward Continuous Current (Figure 1), I_F . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15mA
Surge Non–Repetitive Forward Current (t_p ≤ 1s, Figure 1), I_FSM . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Operating Junction Temperature Range, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Thermal Resistance, Junction–to–Ambient (Figure 1), R_thJA . . . . . . . . . . . . . . . . . . . . . . . . 400°C/W
Figure 1
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d
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* d = 4mm
Infinite heat sinks