NTE5699 Datasheet, PDF (2/3 Pages) NTE Electronics – TRIAC - 800VRM, 25A TO220 Full Pack

Electrical Characteristics: (T_C = +25°C and either polarity of MT2 to MT1, unless otherwise specified)
Characteristics
Symbol Min Typ Max Unit
Peak Blocking Current
(Rated V_DRM, Gate Open)
I_DRM
T_J = +25°C
– – 10 µA
T_J = +125°C
– – 2 mA
Peak On–State Voltage
(I_TM = 35A Peak; Peak Pulse Width ≤ 2ms,
Duty Cycle ≤ 2%)
V_TM
– 1.4 1.85 V
Peak Gate Trigger Current
(Main Terminal Voltage = 12Vdc, R_L = 100 Ohms)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+)
I_GT
mA
– 20 50
– 20 50
– 20 50
– 30 75
Peak Gate Trigger Voltage
(Main Terminal Voltage = 12Vdc, R_L = 100 Ohms)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+)
(Main Terminal Voltage = Rated V_DRM, R_L = 10kΩ,
T_J = +110°C)
MT2(+), G(+); MT2(+), G(–); MT2(–), G(–)
MT2(–), G(+)
V_GT
V
– 1.1 2.0
– 1.1 2.0
– 1.1 2.0
– 1.3 2.5
0.2 0.4 –
0.2 0.4 –
Holding Current
(Main Terminal Voltage = 12Vdc, Gate Open
I_T = 200mA)
I_H
– 10 50 mA
Turn–On Time
(Rated V_DRM, I_TM = 35A, I_G = 120mA)
t_gt
– 1.5 –
µs
Critical Rate of Rise of Off–State Voltage
(Rated V_DRM, Exponential Waveform, T_C = +125°C)
dv/dt – 40 – V/µs
Critical Rate of Rise of Commutation Voltage
dv/dt(c) – 5 – V/µs
(Rated V_DRM, I_TM = 35A, Commutating di/dt = 13.4A/ms,
Gate Unenergized, T_C = +80°C)
Note 1. Ratings apply for open gate conditions. Thyristor devices shall not be tested with a
constant current source for blocking capability such that the voltage applied exceeds the
rated blocking voltage.