English
Language : 

NTE5699 Datasheet, PDF (1/3 Pages) NTE Electronics – TRIAC - 800VRM, 25A TO220 Full Pack
NTE5699
TRIAC – 800VRM, 25A
TO220 Full Pack
Description:
The NTE5699 TRIAC is designed primarily for full–wave AC control applications, such as lighting sys-
tems, heater controls, motor controls, and power supplies; or wherever full wave silicon gate con-
trolled solid state devices are needed. TRIAC type thyristors switch from a blocking to a conducting
state for either polarity of applied voltage with positive or negative gate triggering.
Features:
D Blocking Voltage – 800 Volts
D All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability
D Small, Rugged, TO220 Full Pack for Low Thermal Resistance, High Heat Dissipation, and Durability
D Gate Triggering Guaranteed in Four Modes
Absolute Maximum Ratings:
Peak Repetitive Off–State Voltage, VDRM
(TJ = –40° to +125°C, 1/2 Sine Wave 50 to 60HZ, Gate Open, Note 1) . . . . . . . . . . . . . 800V
Peak Gate Voltage (t ≤ 2µs), VGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±10V
On–State Current RMS, IT(RMS)
(TC = +80°C, Full Cycle Sine Wave 50 to 60HZ, Note 2 ) . . . . . . . . . . . . . . . . . . . . . . . . . . 25A
Peak Non–Repetitive Surge Current, ITSM
(One Full Cycle, 60Hz, TC = +125°C, Preceded and followed by rated current) . . . . . . 250A
Peak Gate Power (t ≤ 2µs), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W
Average Gate Power (TC = +80°C, t ≤ 8.3ms), PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW
Peak Gate Current (t ≤ 2µs), IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
RMS Isolation Voltage (TA = +25°C, Relative Humidity ≤ 20%), V(ISO) . . . . . . . . . . . . . . . . . . . 1500V
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +125°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.8°C/W
Typical Thermal Resistance, Case–to–Sink, RthCS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.2°C/W
Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60°C/W
Note 1. Ratings apply for open gate conditions. Thyristor devices shall not be tested with a
constant current source for blocking capability such that the voltage applied exceeds the
rated blocking voltage.
Note 2. The case temperature reference point for all TC measurements is a point on the center
lead of the package as close as possible to the plastic body.
 ▷