NTE56028 Datasheet, PDF (2/2 Pages) NTE Electronics – TRIAC, 40 Amp

Electrical Characteristics: (T_C = +25°C and either polarity of MT₁ to MT₂ voltage unless
otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max
Peak Forward Blocking Current
I_DRM
V_DRM = 800V, T_J = +25°C
V_DRM = 800V, T_J = +125°C
–
– 10
–
–
2
Peak Reverse Blocking Current
I_RRM V_RRM = 800V, T_J = +25°C
–
– 10
V_RRM = 800V, T_J = +125°C
–
–
2
Peak On–State Voltage
V_TM I_TM = 56A (Peak), Note 3
– 1.40 1.85
Gate Trigger Current (Continuous DC)
MT₂ (+), G (+); MT₂ (–), G (–);
MT₂ (+), G (–)
I_GT
V_D = 12V, R_L = 100Ω,
– 25 50
MT₂ (–), G (+)
– 40 75
Gate Trigger Voltage (Continuous DC)
MT₂ (+), G (+); MT₂ (–), G (–);
MT₂ (+), G (–)
V_GT
V_D = 800V, R_L = 100Ω,
– 1.1 2.0
MT₂ (–), G (+)
– 1.3 2.5
Gate Non–Trigger Voltage
MT₂ (+), G (+); MT₂ (–), G (–);
MT₂ (+), G (–)
V_GD
V_D = 800V, T_J = +125°C, R_L = 10k, 0.2 –
–
MT₂ (–), G (+)
0.2 –
–
Holding Current
I_H V_D = 12V, Gate Open
– 30 75
Gate Controlled Turn–On Time
t_gt V_D = 800V, I_TM = 56A (Peak),
I_GT = 200mA
– 1.5 –
Critical Rate of Rise of Off–State
Voltage
dv/dt V_D = 800V, Exponential Waveform, – 50 –
T_C = +125°C
Critical Rate 0f Rise of Commutation
Voltage
dv/dt(c) V_D = 800V, I_TM = 56A (Peak),
Commutating di/dt = 13.4A/ms,
Gate Unenergized, T_C = +75°C
–
5
–
Unit
µA
mA
µA
mA
V
mA
mA
V
V
V
V
mA
µs
V/µs
V/µs
Note 3. Pulse Width ≤ 2ms, Duty Cycle ≤ 2%.
.420 (10.67)
Max
.110 (2.79)
.147 (3.75)
Dia Max
.500
(12.7)
Max
.070 (1.78) Max
MT₁
.100 (2.54)
.250 (6.35)
Max
.500
(12.7)
Min
Gate
MT₂/Tab