NTE488 Datasheet, PDF (2/2 Pages) NTE Electronics – Silicon NPN Transistor RF Power Output

Electrical Characteristics (Cont’d): (T_C = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector Cutoff Current
Emitter Cutoff Current
I_CBO
I_EBO
V_CB = 25V, I_E = 0
V_EB = 3V, I_O = 0
– – 500 µA
– – 500 µA
DC Forward Current Gain
Output Power
Collector Efficiency
h_FE V_CE = 10V, I_C = 0.1A, Note 1 10 50 180 –
P_O V_CC = 13.5V Pin = 0.3W,
η
f = 175MHz
3.5 4.0 – W
50 60 – %
Note 1. Pulse Test: P_W = 150µs duty = 5%.
.260 (6.6)
Max
.500 (12.7)
Min
.370 (9.39) Dia Max
.355 (9.03) Dia Max
Emitter/Case
.018 (0.45) Dia
Base
Collector
45°
.031 (.793)