NTE488 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon NPN Transistor RF Power Output

NTE488
Silicon NPN Transistor
RF Power Output
Description:
The NTE488 is a silicon NPN epitaxial planar type transistor designed for industrial use RF power
Amplifiers on VHF band mobile radio applications.
Features:
D High Power Gain: G_pe ≥ 10.7dB @ V_CC = 13.5V, P_O = 3.5W, f = 175MHz
D TO39 Metal Sealed Package for High Reliability
D Emitter Electrode is Connected Electrically to the Case
Application:
1 to 3 Watt Power Amplifiers in VHF Band Mobile Radio Applications.
Absolute Maximum Ratings: (T_C = +25°C unless otherwise specified)
Collector–Base Voltage, V_CBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V
Emitter–Base Voltage, V_EBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Collector Current, I_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Collector Dissipation, P_C
T_A = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
T_C = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W
Junction Temperature, T_j . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +175°C
Thermal Resistance, Junction–to–Ambient, R_thJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150°C/W
Thermal Resistance, Junction–to–Case, R_thJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15°C/W
Electrical Characteristics: (T_C = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Emitter–Base Breakdown Voltage
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
V_(BR)EBO
V_(BR)CBO I_C = 10mA, I_E = 0
V_(BR)CEO I_C = 50A, R_BE = ∞
Min Typ Max Unit
4––V
35 – – V
17 – – V