NTE486 Datasheet, PDF (2/2 Pages) NTE Electronics – Silicon NPN Transistor RF High Frequency Amplifier

Electrical Characteristics (Cont’d): (T_C = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Dynamic Characteristics
Current Gain–Bandwidth Product
f_T
V_CE = 10V, I_C = 100mA, f = 200MHz 1800 2000 – MHz
Output Capacitance
Functional Tests
C_ob V_CB = 12.5V, I_E = 0, f = 1MHz
–
3.5 4.0 pF
Common–Emitter Amplifier Power Gain
Collector Efficiency
G_PE V_CC = 12.5V, P_O = 0.75W,
h
f = 470MHz
8.0 8.5
50 70
– dB
–%
Series Equivalent Input Impedance
Z_in
Series Equivalent Output Impedance
Z_out
– 14+j4.0 – Ω
– 28–j38 – Ω
.260 (6.6)
Max
.370 (9.39) Dia Max
.355 (9.03) Dia Max
.500 (12.7)
Min
Emitter
45°
.018 (0.45) Dia
Base
Collector/Case
.031 (.793)