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NTE486 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon NPN Transistor RF High Frequency Amplifier
NTE486
Silicon NPN Transistor
RF High Frequency Amplifier
Description:
The NTE486 is a silicon NPN high frequency RF transistor in a TO39 type package designed for use
in 12.5V UHF large–signal applications required in industrial equipment.
Features:
D Specified 12.5V, 470MHz Characteristics:
Output Power = 0.75W
Minimum Gain = 8dB
Effeciency = 50%
D S Parameter Data from 100MHz to 1GHz
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mA
Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14.3mW/°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
Collector–Emitter Breakdown Voltage
Collector–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
ON Characteristics
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICEO
IC = 5mA, IB = 0
IC = 100µA, IE = 0
IE = 100µA, IC = 0
VCE = 15V, IB = 0
DC Current Gain
hFE VCE = 10V, IC = 50mA
Collector–Emitter Saturation Voltage
VCE(sat) IC = 50mA, IB = 5mA
Min Typ Max Unit
20
–
–V
35
–
–V
4
–
–V
–
–
10 µA
20 60 150
–
–
0.5 V