NTE480 Datasheet, PDF (2/2 Pages) NTE Electronics – Silicon NPN Transistor RF Power Output for Broadband Amp, PO = 40W @ 512MHz

Electrical Characteristic (Cont’d): (T_C = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Static
Output Power
Power Gain
Impedance
Output Capacitance
P_O V_CE = 12.5V, f = 470MHz
P_G V_CE = 12.5V, f = 470MHz
Z_s V_CE = 12.5V, P_i = 10W, f = 470MHz
Z_cl
C_ob V_CB = 12.5V, I_E = 0, f = 1MHz
38
40
–W
5.8
–
– dB
– 2– j1.3 –
Ω
– 1.6– j1.8 –
Ω
–
95
– pF
.405
(10.3)
Min
.205 (5.18)
E
B
.215 (5.48)
.122 (3.1) Dia
.500 (12.7) Dia
.005 (0.15)
C
E
.155 (3.94)
.160 (4.06)
.725 (18.43)
.975 (24.78)
.270
(6.85)