NTE480 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon NPN Transistor RF Power Output for Broadband Amp, PO = 40W @ 512MHz

NTE480
Silicon NPN Transistor
RF Power Output for Broadband Amp,
P_O = 40W @ 512MHz
Description:
The NTE480 is a 12.5 Volt epitaxial silicon NPN common emitter transistor designed for broadband
applications in the 450 to 512MHz land mobile radio band. This device utilizes diffused emitter resis-
tors to withstand infinite VSWR under operating conditions.
Features:
D Designed for UHF Commercial Equipment
D 38W with Greater than 5.8dB Gain
D Withstands 20:1 VSWR Min., All Phase Angles
D Tuned Q Technology
D Diffused Emitter Resistors
Absolute Maximum Ratings: (T_C = +25°C unless othrwise specified)
Collector–Base Voltage, V_CBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V
Collector–Emitter Voltage, V_CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16V
Emitter–Base Voltage, V_EBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Maximum Collector Current, I_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Total Device Dissipation (At +25°C), P_tot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 117W
Operating Junction Temperature, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +200°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction–to–Case, R_thJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5°C/W
Electrical Characteristic: (T_C = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Static
Collector–Emitter Breakdown Voltage V_(BR)CEO I_C = 50mA, I_B = 0, Note 1
V_(BR)CES I_C = 15mA, V_BE = 0, Note 1
Emitter–Base Breakdown Voltage
V_(BR)EBO I_E = 5mA, i_C = 0
Collector Cutoff Current
DC Current Gain
I_CES
h_FE
V_CE = 12.5V, V_BE = 0
V_CE = 5V, I_C = 1A
Min Typ Max Unit
16 –
36 –
4
–
–
–
20 –
–
V
–
V
–
V
5 mA
–
Note 1. Pulsed through 25mH indicator.