NTE477 Datasheet, PDF (2/2 Pages) NTE Electronics – Silicon NPN Transistor RF Power Output

Electrical Characteristics (Cont’d): (T_C = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector Cutoff Current
Emitter Cutoff Current
DC Forward Current Gain
Output Power
I_CBO
I_EBO
h_FE
P_O
V_OB = 15V, I_E = 0
V_EB = 3V, I_O = 0
V_CE = 10V, I_C = 0.2A
V_CC = 13.5V Pin = 6W,
f = 175MHz
– – 2.5 mA
– – 2 mA
10 60 180 –
40 45 – W
60 70 – %
.405
(10.3)
Min
.205 (5.18)
E
B
.215 (5.48)
.122 (3.1) Dia
.500 (12.7) Dia
.005 (0.15)
C
E
.155 (3.94)
.160
(4.06)
.725 (18.43)
.975 (24.78)
.270
(6.85)