NTE477 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon NPN Transistor RF Power Output

NTE477
Silicon NPN Transistor
RF Power Output
Description:
The NTE477 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in VHF
band mobile radio applications.
Features:
D High power gain: G_pe ≥ 8.2dB @ V_CC = 13.5V; V_O = 40W; t = 175MHz
D Emitter ballasted construction and gold metallization for high reliability, and good performances
D Low thermal resistance ceramic package with flange
D Ability of withstanding more than 20:1 load VSWR when operated at V_CC = 15.2V,
P_O = 40W, f = 175MHz, T_C = 25°C
Applications:
30 to 35 watts output power amplifiers in VHF band mobile radio applications.
Absolute Maximum Ratings: (T_C = +25°C unless otherwise specified)
Collector–Base Voltage, V_CBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V
Emitter–Base Voltage, V_EBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Collector–Emitter Voltage (R_BE = ∞), V_CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17V
Collector Current, I_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Collector Dissipation, P_C
T_A = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5W
T_C = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75W
Junction Temperature, T_j . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +175°C
Thermal Resistance, Junction–to–Ambient, R_thJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33.3°C/W
Thermal Resistance, Junction–to–Case, R_thJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2°C/W
Electrical Characteristics: (T_C = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Emitter–Base Breakdown Voltage
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
V_(BR)EBO I_E = 10mA, I_O = 0
V_(BR)CBO I_O = 10mA, I_E = 0
V_(BR)CEO I_O = 0.1A, R_BE = ∞
Min Typ Max Unit
3––V
35 – – V
17 – – V