NTE473 Datasheet, PDF (2/2 Pages) NTE Electronics – Silicon NPN Transistor RF Power Driver

Electrical Characteristics (Cont’d): (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
ON Characteristics
DC Current Gain
Collector–Emitter Saturation Voltage
Dynamic Characteristics
h_FE I_C = 250mA, V_CE = 5V
V_CE(sat) I_C = 250mA, I_B = 50mA
10 –
–
–
– 1.0 V
Current Gain – Bandwidth Product
Output Capacitance
Functional Tests
f_T
I_C = 100mA, V_CE = 28V, f = 100MHz – 500 – MHz
C_ob V_CB = 30V, I_E = 0, f = 100kHz
– 8.0 10.0 pF
Power Input
Common–Emitter Amplifier Power Gain
P_in V_CE = 28V, P_out = 2.5W, f = 175MHz –
G_pe
10
– 0.25 W
–
– dB
Collector Efficiency
η
50 –
–
%
.260 (6.6)
Max
.500 (12.7)
Min
.370 (9.39) Dia Max
.355 (9.03) Dia Max
Emitter
.018 (0.45) Dia
Base
Collector/Case
45°
.031 (.793)