NTE473 Datasheet, PDF(1/2 Page) NTE Electronics – Silicon NPN Transistor RF Power Driver

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NTE473 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon NPN Transistor RF Power Driver

NTE473

Silicon NPN Transistor

RF Power Driver

Description:

The NTE473 is a silicon NPN transistor in a TO39 type package designed for amplifier and oscillator

applications in military and industrial equipment. Suitable for use as output, driver or predriver stages

in VHF equipment.

Features:

D Specified 175MHz, 28V Characteristics:

Output Power: 2.5W

Minimum Gain: 10dB

Efficiency: 50%

Absolute Maximum Ratings:

CollectorâEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V

CollectorâBase Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65V

EmitterâBase Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V

Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A

Total Device Dissipation (TC = +25Â°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7W

Derate Above 25Â°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40mW/Â°C

Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . â65Â° to +200Â°C

Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . â65Â° to +200Â°C

Electrical Characteristics: (TA = +25Â°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

OFF Characteristics

CollectorâEmitter Sustaining Voltage VCEO(sus) IC = 200mA, IB = 0, Note 1

40 â

EmitterâBase Breakdown Voltage V(BR)EBO IE = 0.1mA, IC = 0

Collector Cutoff Current

ICEO VCE = 30V, IB = 0

â 0.1 mA

ICEX VCE = 30V, VBE(off) = 1.5V, TC = +200Â°C â

â 5.0 mA

VCE = 65V, VBE(off) = 1.5V

â 1.0 mA

Emitter Cutoff Current

IEBO VBE = 4V, IC = 0

â 0.1 mA

Note 1. Pulsed thru a 25mH inductor.

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