NTE471 Datasheet, PDF (2/2 Pages) NTE Electronics – Silicon NPN Transistor RF Power Output PO = 100W @ 30MHz

Electrical Characteristics: (T_C = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector Cutoff Current
I_CES V_CE = 30V, V_BE = 0
– – 15 mA
Collector–Emitter Breakdown Voltage V_(BR)CEO I_C = 100mA, I_B = 0, Note 1 36 –
–
V
V_(BR)CES I_C = 100mA, V_BE = 0, Note 1 65 –
–
V
Emitter–Base Breakdown Voltage
V_(BR)EBO I_E = 10mA, I_C = 0
4––V
DC Current Gain
h_FE V_CE = 5V, I_C = 5A
10 50 –
Dynamic Characteristics
Power Output
Power Gain
Capacitance
P_O V_CE = 28V, f = 30MHz
100 – – W
P_g V_CE = 28V, f = 30MHz
15.6 16.0 – dB
C_ob V_EB = 30V, I_E = 0, f = 1MHz – 250 – pF
Note 1. Pulsed through a 25mH inductor.
.250
(6.35)
.225 (5.72)
.725 (18.42)
E
C
.127 (3.17) Dia
(2 Holes)
B
E
1.061 (26.95)
.480 (12.1) Dia
.065 (1.68)
.975 (24.77)
Ceramic Cap
.260
(6.6)
.095 (2.42)