NTE471 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon NPN Transistor RF Power Output PO = 100W @ 30MHz

NTE471
Silicon NPN Transistor
RF Power Output
P_O = 100W @ 30MHz
Description:
The NTE471 is a 28V epitaxial silicon NPN planar transistor designed primarily for SSB communica-
tions. This device utilizes state–of–the–art diffused emitter ballasting for improved ruggedness and
reliability.
Features:
D Better than 15dB Gain at 30MHz and 100W (CW/PEP)
D Diffused Emitter Ballasting
D Withstands Infinite Mismatch at Operating Conditions
D Low Inductance Stripline Package
D Frequency = 30MHz
D Power Out = 100 Watts
D Voltage = 28 Volts
D Power Gain = 15dB
Absolute Maximum Ratings: (T_C = +25°C unless otherweise specified)
Collector–Base Voltage, V_CBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65V
Collector–Emitter Voltage, V_CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V
Emitter–Base Voltage, V_EBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Maximum Collector Current, I_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
Total Device Dissipation (T_C = +25°C), P_tot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 270W
Maximum Junction Temperatures, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +200°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction–to–Case, R_thJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65°C/W