NTE470 Datasheet, PDF (2/2 Pages) NTE Electronics – Silicon NPN Transistor RF Power Output

Electrical Characteristics (Cont’d): (T_C = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
ON Characteristics
DC Current Gain
Dynamic Characteristics
h_FE I_C = 5A, V_CE = 5V
10 30 –
Output Capacitance
Functional Tests
C_ob V_CB = 12.5V, I_E = 0, f = 1MHz
– 650 800 pF
Common–Emitter Amplifier Power Gain
Collector Efficiency
Intermodulation Distortion (Note 1)
G_PE V_CC = 12.5V, P_out = 100W,
η
I_C(max) = 10A, I_CQ = 150mA,
f = 30, 30.001MHz
IMD
10 12 – dB
40 –
–%
– –33 –30 dB
Note 1. To proposed EIA method of measurement. Reference peak envelope power.
.250
(6.35)
.225 (5.72)
.725 (18.42)
E
C
.127 (3.17) Dia
(2 Holes)
B
E
1.061 (26.95)
.480 (12.1) Dia
.065 (1.68)
.975 (24.77)
Ceramic Cap
.260
(6.6)
.095 (2.42)