NTE470 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon NPN Transistor RF Power Output

NTE470
Silicon NPN Transistor
RF Power Output
Description:
The NTE470 is a silicon NPN RF transistor in a W52 type package designed primarily for application
as a high–power linear amplifier from 2.0 to 30MHz.
Features:
D Specified 12.5V, 30MHz Characteristics:
Output Power = 100W (PEP)
Minimum Gain = 10dB
Efficiency
= 40%
D Intermodulation Distortion @ 100W (PEP): IMD = –30dB Min
D 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
Absolute Maximum Ratings:
Collector–Emitter Voltage, V_CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Collector–Base Voltage, V_CBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V
Emitter–Base Voltage, V_EBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V
Continuous Collector Current, I_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
Withstand Current (10s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A
Total Device Dissipation (T_C = +25°C), P_D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 290W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.66W/°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction–to–Case, R_thJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6°C/W
Electrical Characteristics: (T_C = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
Collector–Emitter Breakdown Voltage
Collector–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
V_(BR)CEO I_C = 50mA, I_B = 0
V_(BR)CES I_C = 200mA, V_BE = 0
V_(BR)CBO I_C = 200mA, I_E = 0
V_(BR)EBO I_E = 10mA, I_C = 0
I_CES V_CE = 16V, V_BE = 0, T_C = +25°C
Min Typ Max Unit
20 –
–
V
45 –
–
V
45 –
–
V
3
–
–
V
–
– 10 mA