NTE464 Datasheet, PDF (2/2 Pages) NTE Electronics – Silicon Complementary MOSFET Transistors Enhancement Mode for Switching Applications

Electrical Characteristics (Cont’d): (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Small–Signal Characteristics
Drain–Source Resistance
NTE464
NTE465
r_ds(on) V_GS = –10V, I_D = 0, f = 1kHz
– – 600 Ω
– – 300 Ω
Forward Transfer Admittance
Input Capacitance
Reverse Transfer Capacitance
Drain–Substrate Capacitance
NTE464
NTE465
|y_fs| V_DS = –10V, I_D = 2mA, f = 1kHz
C_iss V_DS = –10V, V_GS = 0, f = 140kHz
C_rss V_DS = 0, V_GS = 0, f = 140kHz
C_d(sub) V_D(SUB) = –10V, f = 140kHz
1000 –
––
––
– µmhos
5
pF
1.3 pF
–
–
4
pF
–
–
5
pF
Switching Characteristics
Turn–On Delay
Rise Time
Turn–Off Delay
Fall Time
t_d1 I_D = –2mA, V_DS = –10V, V_GS = –10V –
t_r
–
t_d2
–
t_f
–
– 45
ns
– 65
ns
– 60
ns
– 100 ns
.220 (5.58) Dia
.185 (4.7) Dia
.190
(4.82)
.030 (.762)
.500
(12.7)
Min
.018 (0.45) Dia
Source
Gate
Drain
45°
Case
.040 (1.02)